Applications
  • PV Inverters
  • UPS
  • High speed motor drives
  • Induction heating
  • Welding
  • Military & Aerospace power converters
  • Medical imaging amplifiers
  • Electric vehicle
  • Boost converters

Product Advantages
  • Significant reduction in switching losses
  • Increased system efficiency
  • High temperature operation
  • Higher operating frequency
  • Reduced cooling requirements
  • Zero reverse recovery current from diode
  • Low parasitic inductance
  • Reduced system size / high power density

Full SiC & Hybrid SiC IGBTs
PDF
Overview

Large bandgap energy and high field breakdown are two primary characteristics of silicon carbide (SiC) which have been leveraged to create a new generation of power semiconductors with zero reverse recovery charge, significantly lower switching losses and the opportunity for higher temperature operation.

Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high performance all SiC modules or with high frequency silicon IGBTs into hybrid Si / SiC modules. The new low profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling applications.


Package Configuration

Product Package Dimensions

Product Line-up
Split Dual Hybrid Si/SiC
QID1210005, Split Dual IGBT, 1200V, 100A
QID1210006, Split Dual IGBT, 1200V, 100A


All SiC
QJD1210010, Split Dual MOSFET, 1200V, 100A
QJD1210011, Split Dual MOSFET, 1200V, 100A


Features
QID1210005, QID1210006
  • Low ESW(off)
  • Aluminum Nitride Isolation
  • Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode
  • Low Internal Inductance
  • 2 Individual Switches per Module
  • Isolated Baseplate for Easy Heat Sinking
  • Automated Assembly Assures High Reliability
  • NFH Silicon IGBTs

QJD1210010, QJD1210011
  • Junction Temperature: 175°C
  • Silicon Carbide Chips
  • Low Internal Inductance
  • Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode
  • High Speed Switching
  • Low Switching Losses
  • Low Capacitance
  • High Power Density
  • Isolated Baseplate
  • Aluminum Nitride Isolation
  • 2 Individual Switches per Module

For more information:
email: globalsales@pwrx.com
phone: 724-925-7272, Option 3 (Applications Engineering Assistance)
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